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RP1E050RP
　
Data Sheet
200
150
I D = -5.0A
Ta=25°C
Pulsed
1000
100
t d (off)
t f
Ta=25°C
V DD = -15V
V GS = -10V
R G =10 ?
Pulsed
10
8
6
100
50
I D = -2.5A
10
t d (on)
t r
4
2
Ta=25°C
V DD = -15V
I D = -5.0A
R G =10 ?
0
1
0
Pulsed
0
5
10
15
0.01
0.1
1
10
0
5
10
15
20
GATE-SOURCE VOLTAGE : -V GS [V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
DRAIN-CURRENT : -I D [A]
Fig.11 Switching Characteristics
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
10000
1000
Ta=25°C
f=1MHz
V GS =0V
Ciss
1000
100
10
Operation in this area is limited by R DS(on)
(V GS =-10V)
P W =100us
1
P W =1ms
100
Crss
P W = 10ms
Coss
0.1
Ta = 25°C
Single Pulse
MOUNTED ON CERAMIC BOARD
DC operatio n
10
0.01
0.1
1
10
100
0.01
0.1
1
10
100
10
1
0.1
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
DRAIN-SOURCE VOLTAGE : -V DS [V]
Fig.14 Maximum Safe Operating Area
Ta = 25°C
Single Pulse : 1Unit
Rth(ch-a)(t) = r(t)×Rth(ch-a)
Rth(ch-a) = 62.5 °C/W
<Mounted on a CERAMIC board>
0.01
0.001
0.01
0.1
1
10
100
1000
PULSE WIDTH : Pw(s)
Fig.15 Normalized Transient Thermal Resistance vs. Pulse Width
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?20 10 ROHM Co., Ltd. All rights reserved.
4/5
2010.07 - Rev.B
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